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More dynamics, more perspectives, all-round display of the development of LONTEN
Lonten's G3 technology platform officially released
2026.01.20
In the dual track of carbon neutrality and high power density, the challenge for power engineers has never been greater: smaller size, higher efficiency, and lower heat generation. Today, Lonten Semiconductor officially handed over the answer sheet -a new third-generation (G3) super junction MOSFET technology platform developed based on its own process route. This is not only a product iteration, but also a demonstration of the results of our years of deep cultivation of multi-layer epitaxial technology. We don't talk about virtual "revolutions", only about the real changes it can bring to your design.
G3 8-inch Super Junction MOSFET Wafer
The G3 platform is not a simple parameter fine-tuning, but a systematic reshaping from cellular structure to manufacturing processes.
Extremely compact: The cell spacing is compressed to 5.5μm, which is currently one of the most compact chip structures in its kind in China. We break down space constraints by highly matching leading device designs with a multilayer epitaxial process. This means that you can achieve greater power density in the same package volume. For application scenarios such as on-board chargers and high-density server power supplies, the G3 provides a new problem-solving idea.
Loss bottoming: Rsp 9.0 mΩ·cm² (600V) Same silicon area, lower impedance, less heat. In the TO247 package, we managed to achieve an on-resistance of 14 mΩ, approaching the theoretical limit of silicon-based super junction. This means that the current channel is "wider" and the conduction loss is pushed to the extreme.
Extremely fast switching: Qg↓24%, Coss↓50% This is a boon for high-frequency power supply design. Compared to the previous generation G1 platform, the G3 has made a qualitative leap in dynamic characteristics:
The gate charge (Qg) is reduced by 24% @10V, making it easier to drive and switch faster.
The output capacitance (COSS) is reduced by 50% @400V, and the hard switching stress is significantly reduced.
Shutdown losses (EOSS) are reduced by 40% @400V, allowing the system to operate at higher frequencies while still maintaining cool temperatures and efficiency.
Rock-solid: Industrial-grade reliability against grid fluctuations and load fluctuations. We know that "bombing" is an engineer's nightmare. The G3 continues our paranoia on reliability by making redundancy in single-pulse avalanche energy (EAS) tolerance and high-temperature stability to ensure stability in harsh industrial and communication environments.
Comparison of Eoss curves between G3 and G1
The G3 series was designed to be "all-round". Whether it's a soft switch for ultimate efficiency or a hard switch that emphasizes tolerance, it can handle it.
Soft switching scenarios: LLC resonant converter, ZVS phase-shifting full bridge
Hard switching scenarios: PFC, TTF topologies
Target Applications:
Consumer electronics (fast charging, adapters, LEDs, TVs, PC power supplies)
Industrial power supply
Data center and 5G communication power supply
New Energy (Photovoltaic Energy Storage)
Charging piles, on-board charger (OBC)
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