New Product Launch | Lonten Semiconductor launched 1200V/25A IGBT
2026.03.06
At a time when scenarios such as portable energy storage, frequency conversion home appliances, and small industrial drives continue to explode, the market demand for small and medium-power 1200V IGBTs has ushered in rapid growth. How to achieve lower loss, higher reliability and better cost performance in a limited volume has become the core demand of industry customers. The new LKB25N120UM1 IGBT (1200V/25A) launched by Lonten Semiconductor adopts a new field-cut-off IGBT technology to achieve the best compromise between switching loss and on-state loss. As the main model of the company's key layout of small and medium-power gears, it is accurately positioned in the application scenarios of small and medium-power power electronics, which can fully meet the performance needs of this field.

Highlights:
Low on-voltage drop for improved system efficiency:
The type VCE(sat) is only 1.5V (@ Tvj=25°C, Ic=25A), and the low on-voltage drop (1.9V at 175°C) is maintained at high temperatures, effectively reducing conduction losses.
High junction temperature capability for harsh operating conditions:
Maximum operating junction temperature Tvj=175°C, providing greater heat redundancy for high-power density designs.
Optimized switching characteristics to reduce electromagnetic interference:
Optimized gate drive characteristics significantly suppress VGE oscillations during switching on and improve system stability.
Built-in Quick Recovery Diode:
Integrated fast recovery reverse parallel diode with a typical reverse recovery time of 371ns and a reverse recovery charge Qrr of 1471nC, suitable for high-frequency hard switching applications.
Short-circuit resistance:
The product has industry-leading short-circuit tolerance time and has good short-circuit robustness.
Typical Applications:
UPS
Welding machine
Converter
Back