New Product Launch | Lonten Semiconductor launched 1200V/25A IGBT

2026.03.06

At a time when scenarios such as portable energy storage, frequency conversion home appliances, and small industrial drives continue to explode, the market demand for small and medium-power 1200V IGBTs has ushered in rapid growth. How to achieve lower loss, higher reliability and better cost performance in a limited volume has become the core demand of industry customers. The new LKB25N120UM1 IGBT (1200V/25A) launched by Lonten Semiconductor adopts a new field-cut-off IGBT technology to achieve the best compromise between switching loss and on-state loss. As the main model of the company's key layout of small and medium-power gears, it is accurately positioned in the application scenarios of small and medium-power power electronics, which can fully meet the performance needs of this field.

Highlights:

Low on-voltage drop for improved system efficiency: 

The type VCE(sat) is only 1.5V (@ Tvj=25°C, Ic=25A), and the low on-voltage drop (1.9V at 175°C) is maintained at high temperatures, effectively reducing conduction losses.

High junction temperature capability for harsh operating conditions: 

Maximum operating junction temperature Tvj=175°C, providing greater heat redundancy for high-power density designs.

Optimized switching characteristics to reduce electromagnetic interference: 

Optimized gate drive characteristics significantly suppress VGE oscillations during switching on and improve system stability.

Built-in Quick Recovery Diode:

Integrated fast recovery reverse parallel diode with a typical reverse recovery time of 371ns and a reverse recovery charge Qrr of 1471nC, suitable for high-frequency hard switching applications.

Short-circuit resistance: 

The product has industry-leading short-circuit tolerance time and has good short-circuit robustness.

 

Typical Applications:

UPS

Welding machine

Converter