New Product Launch | 150V G3 Platform SGT New Product

2025.12.19

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With the rising demand for high-efficiency and high-reliability power devices for new energy vehicle electric drive systems and battery management (BMS), power semiconductor technology is facing a new round of innovation. In response to the market's urgent demand for lower loss and higher power density solutions, Lonten Semiconductor officially launched its next-generation 150V G3 platform shielded gate trench (SGT) MOSFET product, LSGT15R032. With an ultra-low on-resistance of 3.25mΩ and a powerful current capability of 279A, this product is designed to set a new benchmark for performance in high-end BMS, electric drive, and DC-DC conversion applications.

Overview of product models and parameters:

Key parameters	Specifications	Remarks/Conditions
Type	LSGT15R032
Technology platform	G3 SGT (Shielded Gate Trench)	Next-generation platform
VDSS	150 V
RDS(on)	Typical 2.7 mΩ Maximum 3.25 mΩ	@V_GS=10V, I_D=50A, T_J=25°C
ID	279 A (Silicon capabilities limit，T_C=25°C)	Package limit current 300A
Packaged form	TOLL	Excellent heat dissipation and power density

Features of the product:

Extremely low resistance, efficiency jump: Industry-leading on-resistance of 3.25mΩ at 150V with advanced G3 shielded gate trench technology, significantly lower than the previous generation G2 platform (4.0mΩ). This means that conduction losses are significantly reduced at the same current, directly improving the overall efficiency of the system and reducing temperature rise.

Strong current, surging power: At 25°C shell temperature, the continuous drain current is as high as 279A, and the pulse current capacity reaches 1116A. The powerful current handling capability enables it to calmly cope with instantaneous high-current shocks in scenarios such as electric drive start-up and BMS main loop switching, and the reliability and robustness of the system are doubled.

Superior robustness and reliability: The product is guaranteed to be tested for 100% avalanche energy (EAS) and is rated for avalanche energy up to 1600mJ, with excellent resistance to reverse recovery and short circuit. The TOLL package provides a very low junction-to-shell thermal resistance of 0.26°C/W, ensuring that chip heat can be quickly exported to meet the requirements of high-reliability applications.

Precise positioning, optimized design: This product is optimized for BMS (battery management system) and motor drive areas where static losses and on-state capability are demanding. Compared with the previous generation (G2) product, it has obvious advantages in static performance.