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New Product Launch | Lonten's G3 super junction platform 650V high-voltage MOSFET
2026.05.18
Lonten Semiconductor's first high-voltage MOSFET-LSD65R150G3 based on the new G3 super junction 650V platform was officially released to the market. The TO-220F is packaged in a fully insulated package with lower on-resistance, better gate charge, and faster switching speeds, providing next-generation core power solutions for applications such as LED power supplies, high-efficiency adapters, high-power power supplies, and industrial power supplies.
LSD65R150G3 based on the G3 super junction technology platform independently developed by Lonten Semiconductor, through the in-depth optimization of the cell structure, gate design and terminal withstand voltage, the on-resistance and parasitic capacitance parameters per unit area are significantly reduced while maintaining the high withstand voltage capability of 650V. As the first product of this platform, LSD65R150G3 achieves a typical on-resistance of 125mΩ and a maximum of 150mΩ at a breakdown voltage of 650V, while controlling the total gate charge to only 34nC (typical), significantly reducing drive and switching losses, and helping power systems achieve higher frequency and higher power density designs.
The test results of Lonten Semiconductor Application Team show that compared with the previous generation of super junction products, the new generation of G3 super junction products LSD65R150G3 significantly optimized in terms of on-resistance performance, and the on-resistance is lower under the same withstand voltage, thereby reducing the on-on loss. At the same time, the total gate charge (Qg) and input capacitance (Ciss) are significantly reduced, which directly contributes to reducing switching losses: a lower Qg reduces drive losses and speeds up switching response, while a smaller Ciss further increases switching speed and reduces drive current requirements. In addition, the device has significantly improved avalanche tolerance, approximately 5x EAS, significantly enhanced robustness, higher ability to withstand a single avalanche energy shock, and higher reliability under overvoltage or inductive load conditions.
Source: Lonten Laboratory Test Results
"We designed the G3 platform and LSD65R150G3 with the goal of helping customers effectively control total system losses while achieving higher switching frequencies and smaller sizes," said the head of the Lonten MOSFET product line. According to the parameters of the product specification and actual test results, LSD65R150G3 has stable body diode reverse recovery characteristics, sufficient avalanche resistance, and controllable high-temperature on-resistance, and is fully qualified for the core switching position in applications such as switching power supplies, PD chargers, and industrial power supplies. ”
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