New Product Launch | 600V/37mΩ Pt-Diffused Super Junction MOSFETs

2026.04.23

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Recently, Lonten launched a 600V, 80A, 37mΩ N-channel super junction power MOSFET. Relying on the dual blessing of advanced super junction technology and innovative platinum diffused technology, the product brings a new upgrade solution for high-power and high-efficiency power applications with the core advantages of ultra-low loss, excellent body diode characteristics, industrial-grade high reliability, and strong scenario adaptability.

01- Process Highlights: Platinum Diffused technology to comprehensively improve dynamic performance: The Pt-Diffused Process optimizes the internal switching characteristics of the device by accurately controlling minority carrier lifetime, and the measured benefits are as follows:

Reduced reverse recovery charge (Qrr): Typical value of only 722nC, reducing diode reverse recovery loss.

Reduced Reverse Recovery Time (TRR): Typical 128.6ns, increasing system switching frequency potential.

Smooth Reverse Recovery Current Peak (Irm=9.05A): Improves EMI performance and reduces peripheral filtering design pressure.

02- Core electrical performance

Ultra-low on-resistance: Typical RDS(on) is only 31mΩ (37mΩ max), with significantly reduced on-loss.

Very low gate charge: Qg typical 116.8nC for fast switching and reduced drive losses.

High current capability: continuous drain current 80A (Tc=25°C), pulse current 240A.

100% UIS tested: 951mJ of avalanche energy in a single pulse, ensuring robustness in harsh conditions

Source: Lonten Laboratory Test Results

03-Test comparison

Compared with the actual measurement of switching waveforms under the same working conditions, Lonten Semiconductor's super junction MOSFETs have faster turn-on speed, shorter current tailing during shutdown, smaller VDS spikes and oscillations, and a gentler Miller platform, and significantly lower turn-on/shutdown losses than mainstream competitors in the industry, which can effectively reduce the heat consumption of the whole machine and improve the efficiency and operational reliability of high-frequency power conversion.

Source: Lonten Laboratory Test Results

Comparing the diode waveforms under the same working conditions, it can be seen that Lonten's super junction MOSFETs perform well in the reverse recovery process due to the advanced Pt-Diffused Process, with shorter reverse recovery time and softer reverse recovery process. This feature effectively reduces switching losses and EMI interference, and improves system stability and heat dissipation performance under high-frequency conditions.

04-Typical applications

Formation Power Supply

OBC (On-Board Charger)

Communication power supply

Charging piles

High-power industrial power supply

‌Mining Rig Power Supply

05- Packaging and ordering information

Package form: TO-247, excellent heat dissipation, suitable for high-current wiring.

Product model: LSB60R037HP

Email: sales@lonten.cc

Hotline: +86-029-8665 8666-ext. 8101