SiC JBS

As a unipolar device, the Silicon Carbide Junction Barrier Schottky diode (SiC JBS) does not have a few carriers to store, and exhibits ideal reverse recovery characteristics to meet the needs of high-frequency applications.

 

LONTEN’s SiC JBS adopt the combined PiN Schottky structure (MPS), which has the characteristics of strong surge ability. At the same time, the chip adopts advanced substrate thinning technology and field-limited loop terminal structure, which can achieve a good compromise between on-state voltage drop, breakdown voltage and reverse recovery.

Low forward voltage drop(VF)

Low leakage current（IR）

Positive temperature coefficient on VF, easy to parallel

Strong surge withstand capability

SiC JBS cross-sectional structure

SiC JBS cross-sectional structure

Main Application Fields

Naming Rules

Product List

Voltage
level

Part Number

VRRM(V)

IF (A)

VF(V)
(Tj=25℃)

Typ.

VF(V)
(Tj=175℃)

Typ.

IR(uA)
(Tj=25℃)

Typ.

IR(uA)
(Tj=175℃)

Typ.

Qc(nC)

Typ.

PD (W)
25℃

Package

Operation

Sample Application

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