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Application of SJ MOSFET in PD Fast Charging
2024.03.17
1、The History of USB Charging
USB PD1.0 is an integration of the previous USB BC technology, and in 2012, USB-IF released the USB PD 1.0 fast charging protocol. This is a protocol based on USB Type-A and USB Type-B interfaces, which is not widely recognized due to the limitations of cables and other factors, and the charging power is low.
The release of the USB PD2.0 specification is based on the Type-C interface, and the VBUS voltage can be switched between 5V, 9V, 15V and 20V. USB PD2. The O specification laid the foundation for modern USB PD technology and was epoch-making. In August 2014, the USB PD2.0 fast charging standard was released, which not only stipulated that the USB Type-C interface was the only standard interface, but also gave this interface more functions, such as charging, data transmission, audio transmission, etc. In terms of charging, USB PD2.0 defines support for 5V3A, 9V3A, 12V3A, 15V3A, and 20V5A outputs, with a maximum charging power of 100W.
In November 2015, USB PD entered the era of PD3.0 fast charging. The changes of USB PD3.0 over USB PD2.0 are mainly in three aspects: a more detailed description of the characteristics of the device's built-in battery; The function of identifying the software and hardware version of the device and software update through PD communication has been added, and the functions of digital certificate and digital signature have been added. In February 2017, USB PD received a major update of "minor patches" with the release of USB PD3.0 PPS, which adds programmable power functions (PPS) to the PD3.0 standard.
USB PD 3.1 is a fast charging protocol standard introduced by the USB-IF Association in 2021, which is a further expansion of the power range on the basis of USB PD 3.0. In the USB PD 3.1 specification, the original USB PD3.0 content is grouped into the standard power range (SPR), and the maximum power remains unchanged at 100W. At the same time, the extended power range (EPR) has been added, and the maximum power has been extended from 100W to 240W. In EPR, a variety of fixed voltage and adjustable voltage levels have been added to meet the charging needs of different devices.
2、Market Analysis
In this context, high power, small size, and high performance have become the core direction of the development of consumer power products, and the PD3.1 standard has further improved the versatility of PD fast charging standards, promoting the widespread penetration of fast charging technology into many fields such as mobile phones, tablets, notebooks, displays, new energy vehicles, power tools and IoT devices. The data shows that the global fast charging market size has exceeded 100 billion yuan in 2023, a year-on-year increase of 28%, and the fast charging penetration rate of the wired charger market will climb to 98% in 2024.
3、Product Application and Advantages
PD charger QR flyback topology（<75W）
QR flyback + secondary synchronous rectification topology, the primary MOS requires the switching speed to be moderate, the EMI characteristics are good, and the secondary MOS needs to have a low FOM value and a low Vth .
PD charger PFC+LLC topology（>75W）
PFC+LLC topology, the first-level PFC circuit, requires small internal resistance, large impulse current when the circuit starts, and requires the MOSFET to have strong EAS capability; The post-level LLC resonant circuit requires the body diode of the MOSFET to have strong di/dt capability and a small Qrr. The secondary MOS of the secondary needs to have a low FOM value and a low Vth.
PD fast charging market application, Lonten Semiconductor's high-voltage SJ MOS, its product advantages:
For QR flyback topology, optimize the switching speed, making it easier to pass EMI testing;
For LLC topology, the body diode is optimized to enhance di/dt capability and reduce Qrr and drive interference.
Optimize the ratio of Qg and Coss/Ciss to reduce drive loss and improve drive anti-interference ability.
Optimized EAS to enhance avalanche resistance.
PD fast charging market application, Lonten Semiconductor's SGT MOS, its product advantages:
Optimized Qg and Vth, low turning voltage can match most synchronous rectifier chips;
Optimize Coss and Rdson to reduce switching and conduction losses to a greater extent, and reduce temperature rise.
The above advantages make the application of Lonten products in PD fast charging simple.
65W PD charging head high-voltage MOS comparative test
Note: The above data is from Lonten Semiconductor, please indicate the source for reprinting.
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