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New Product Launch | Lonten Semiconductor launched 1200V 50A IGBT to empower medium and low voltage industrial and new energy applications
2025.04.25
With the rapid development of power devices, how to achieve lower loss, stronger reliability and wider application coverage has become the focus of the industry. Lonten Semiconductor launched a new product of **1200V 50A Field Stop Trench IGBT**, which is designed for high-frequency application scenarios. Relying on advanced process platforms and systematic design capabilities, it injects efficient driving force into industrial inverter, UPS, new energy and other scenarios.
Product：LKB50N120MF1M
Features:
1. Advanced technology, superior performance: This IGBT adopts the Field Stop Trench technology platform, combined with the optimized trench gate structure, which effectively reduces the conduction loss and switching loss, and has both high-speed switching capability and wide safe working area (SOA), which is especially suitable for system applications in high-frequency working environments, bringing customers higher system efficiency and operational reliability.
2. Excellent electrical performance index:
Collector-Emitter Voltage (Vce): 1200V
Rated Current (Ic): 50A
Maximum Power Consumption (Pd): 399W @ 25°C
Saturation Voltage Drop Vce (sat): Typical 1.85V @ 25°C
Turn-off Loss Eoff: Typical 1.86mJ @ 25°C
3. Perfect thermal/electrical characteristic curve: From output characteristics, switching losses to junction temperature limits, the device fully considers the matching needs of customers in the early stage of design, and has excellent thermal stability and impact resistance.
This 1200V IGBT is particularly suitable for:
1. UPS vs. data center power supply
2. Electric welding machine and induction heating equipment
3. Photovoltaic and energy storage inverters
4. DC-AC/DC-DC conversion for electric vehicles
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