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New Product Launch | 650V 99mΩ Super Junction MOSFET was released
2025.09.22
Lonten Semiconductor's latest 650V/40A/99mΩ super junction MOSFET has built-in FRD, adapts to LLC applications, and is suitable for multi-tube applications, with faster switching speed and lower conduction loss; Extremely low gate charge (Qg) greatly improves system efficiency and excellent EMI performance.
The product has a withstand voltage of 650V and an on-resistance of only 99mΩ, allowing MOS tubes to achieve lower power loss and higher efficiency in the on-on state, while reducing the cost and providing customers with a low-cost design solution. This product is mainly suitable for power supplies, inverters and other high-voltage switching applications.
Product Features:
RDS(on)*A for industry advantages
Integrated fast recovery diodes
Excellent high switching speed
Enhanced DV/DT capabilities
Competitive Advantage:
RDS(on)*A for industry advantages
The performance of Qrr reverse recovery charge is significantly improved
The Trr reverse recovery time is significantly shorter than that of similar products
LSD65R099HP adopts advanced PT technology, and the IDSS leakage is lower than that of irradiated products under high and low temperature conditions. At the same time, its Trr and Qrr performance parameters are better than those of mainstream products on the market, significantly improving the reliability and energy efficiency of the product.
Applications:
Data Centers
Communication power supply
EV charging OBC
UPS
Industrial SMPS
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