Trench MOSFET

Power semiconductor low-voltage trench MOSFET have evolved from earlier planar gate MOSFET, which have improved the horizontal conductive channel to a vertical conductive channel, making it possible to further reduce the unit cell area. At the same time, the low-doped epitaxial layer is used to provide sufficient withstand voltage, and various devices with different withstand voltages can be easily obtained by changing the doping concentration and thickness of the epitaxial layer. On the basis of ensuring that the breakdown voltage of the device meets the requirements, an important development trend of trench power devices is to make the size of a single cell smaller and smaller, and the density of the cell is getting higher and higher, which is conducive to reducing the RDS(ON) per unit area.

 

LONTEN provides a series of medium and low voltage trench MOSFET products, covering N/P20V~100V. According to the requirements and characteristics of device performance in different application fields, different design schemes are adopted to make the devices have excellent performance in their respective applications.

 

High avalanche withstand capability

Strong impact resistance

Complete product line

Trench MOSFET profile structure

Trench MOSFET profile structure

Main Application Fields

Naming Rules

Product List

Voltage
level

Part Number

VDS (V)

ID (A) 25℃

PD (W) 25℃

RDS(ON) (mΩ)
(VGS=10V)

Typ.

RDS(ON) (mΩ)
(VGS=10V)

Max.

RDS(ON) (mΩ)
(VGS=4.5V)

Typ.

RDS(ON) (mΩ)
(VGS=4.5V)

Max.

Qg(nC)
(VGS=10V)

Typ.

Qg(nC)
(VGS=4.5V)

Typ.

VGS (V)

VGS(th) (V)

Typ.

Package

Operation

condition:
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