SiC MOSFET

The planar gate silicon carbide metal oxide field-effect transistor (SiC MOSFET) product developed by LONTEN adopts small cell design, JFET injection design, leading substrate thinning technology and excellent terminal field limit loop structure, which makes the performance of on-resistance, leakage current and breakdown voltage a good compromise, and shows fast switching speed and good avalanche resistance.

High breakdown voltage

Low specific on-resistance / Low switching losses

Low switching losses

Maximum operating junction temperature of 175°C

Vertical planar gate SiC MOSFET profile structure

Vertical planar gate SiC MOSFET profile structure

Main Application Fields

Naming Rules

Product List

Voltage
level

Part Number

VDS (V)

ID (A) 25℃

RDS(ON) (mΩ)
(Tj=25℃)

Typ.

RDS(ON) (mΩ)
(Tj=25℃)

Max.

Vth(V)

Typ.

Qg(nC)

Coss(pF)

PD (W)
25℃

Package

Operation

Sample Application

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