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SGT MOSFET
Shielded Gate Trench MOSFET(SGT-MOSFET) power device is an improved trench power MOSFET based on traditional trench MOSFETs (U-MOSFET), which significantly reduces Miller's capacitance (Cgd) through the introduction of polycrystalline silicon field plates. At the same time, relying on the charge induction effect of the thick oxide layer, horizontal depletion is introduced on the basis of the vertical depletion (p-body/n-epi junction) of the traditional trench MOSFET, and a new electric field spike is introduced at the bottom of the deep trench, so that the electric field in the drift region is changed from a triangular distribution to an approximate rectangular distribution, and the drift region resistance is reduced when the same breakdown voltage is realized, thereby significantly reducing the specific on-resistance of the device.
LONTEN’s SGT MOSFET series products leverage an optimized trench shield gate design and advanced process manufacturing technology, achieving low Qg, fast and flexible reverse recovery characteristics. The product lineup spans a voltage range from 25V to 200V, catering to a diverse spectrum of application fields.
Ultra-low specific on-resistance (Ronsp = RDS(on) × AChip)
Fast switching speed
Low driving loss
High Design Margin
Schematic diagram of SGT
Main Application Fields
Naming Rules
Product List
Voltage
level
Part Number
VDS (V)
ID (A) 25℃
PD (W) 25℃
RDS(ON) (mΩ)
(VGS=10V)
Typ.
RDS(ON) (mΩ)
(VGS=10V)
Max.
RDS(ON) (mΩ)
(VGS=4.5V)
Typ.
RDS(ON) (mΩ)
(VGS=4.5V)
Max.
Qg(nC)
(VGS=10V)
Typ.
VGS (V)
VGS(th) (V)
Typ.
Package
Operation
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