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IGBT Module
IGBT module is a modular semiconductor device that integrates IGBTs and FRDs (Fast Recovery Diode chips) through specialized circuit interconnection and packaging techniques.
LONTEN 's IGBT module series products adopt a design that combines the industry-leading Field-Stop (FS) technology with the Micro-Pattern Trench (MPT) gate structure. This design achieves a favorable balance between the on-state voltage drop, switching losses, and device robustness. The MPT structure optimizes and scales down the trench gate width and cell pitch, thereby reducing the size of individual cells. This leads to a significant increase in current-carrying capacity under the same chip area, further enhancing the device's power density.
In terms of packaging process, the industry's leading low-temperature one-time welding technology is introduced, and the double-track parallel bonding process, electrode modular intelligent sieve disc assembly, automatic functional testing and other processes are innovatively adopted, which greatly improves the consistency and reliability of the product.
LONTEN offers a comprehensive range of IGBT modules spanning voltage ratings from 600V to 1700V and covering various current levels, tailored to meet diverse voltage and current requirements across applications. These modules are ideally suited for systems including electric vehicles (EVs), PV inverters, energy storage converters, EV charging stations, servo drives, UPS, frequency converters, and welding machines.
Low switching losses
Low saturation voltage (Vce(sat))
High RBSOA capability
High power density
Low reverse recovery losses
Integrated temperature sensor
Schematic diagram of IGBT Module
Main Application Fields
Naming Rules
Product List
Voltage
level
Part Number
VCES(V)
IC(A)
Technology
Configruation
VCE(sat)(V)
(Tj=25℃)
VGE(th)(V)
VF(V)
(Tj=25℃)
Packages
Features
Operation
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