IGBT
IGBT (Insulated Gate Bipolar Transistor) is developed based on MOSFET. IEC (International Electrotechnical Commission) defines it as a transistor with a conductive channel and a pn junction, and the current flowing through the channel and junction is controlled by the electric field generated by the voltage applied between the gate and the collector-emitter.
LONTEN's IGBT series products adopt a design that combines the industry-leading Field-Stop (FS) technology with the Micro-Pattern Trench (MPT) gate structure. This design achieves a favorable balance between the on-state voltage drop, switching losses, and device robustness. The MPT structure optimizes and scales down the trench gate width and cell pitch, thereby reducing the size of individual cells. This leads to a significant increase in current-carrying capacity under the same chip area, further enhancing the device's power density. Additionally, through a specially designed trench connection method, this series of products can significantly enhance the flexibility in controlling device characteristic parameters, effectively reducing both dynamic and static losses, and improving system efficiency. It provides a reliable solution for applications requiring high-performance power semiconductor devices.
LONTEN offers a diverse range of IGBT products with voltage ratings of 650V and 1200V, catering to various voltage and current requirements across different applications. These devices are suitable for systems such as general-purpose inverters, PV inverters, EV Charging Stations, UPS, power tools, white goods (household appliances), welding machines, and Switch-Mode Power Supplies (SMPS).
Low turn-off loss
Low saturation voltage drop
High power density
Serialized products tailored for different application fields
Main Application Fields
Naming Rules

Product List
Voltage
level
Part Number
V(BR)
CES (V)
IC(A)
(TC=100℃)
PD(W)
(TC=25℃)
VCE(sat)(V)
(Tj=25℃)
Typ.
Eoff(mJ)
(Tj=25℃)
Typ.
VTH(V)
Typ.
VGS (V)
VF(V)
Typ.
Package
Operation