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Super Junction MOSFET
Super Junction MOSFET (Meta Oxide Semiconductor Field Effect Transistor) introduces transverse electric field regulation based on traditional VDMOS through alternately arranged P-type column structures, making its vertical electric field distribution approach an ideal rectangle. This structure improves the device's voltage withstandability by about 20% while maintaining the same epitaxial resistance. For products with the same voltage withstand voltage specifications, the RDS（ON）per-area of the super-junction technology can be reduced to less than 1/8 of the traditional structure, achieving coordinated optimization of conduction loss and blocking characteristics.
LONTEN's Super Junction MOSFET series products are manufactured using deep trench technology and multiple epitaxial technology. They have extremely low RDS（ON） and Qg, significantly reducing conduction and switching losses, and are particularly suitable for use in high power density and high efficiency power electronic conversion systems.
Lower conduction loss
Higher power densities
Lower switching loss
Complete product line
Super Junction MOSFET
Super Junction MOSFET
Main Application Fields
Naming Rules
Product List
Voltage
level
Part Number
VDS (V)
ID (A) 25℃
PD (W) 25℃
RDS(ON) (Ω)
(VGS=10V)
Typ.
RDS(ON) (Ω)
(VGS=10V)
Max.
Qg(nC)
(VGS=10V)
Typ.
VGS (V)
VGS(th)
(V)
Typ.
Package
Operation
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